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US 6,310,377 B1Granted
Semiconductor device having an SOI structure
OwnerShigenobu Maeda, Yasuo Yamaguchi +4inventors
InventorsShigenobu Maeda, Yasuo Yamaguchi, Il Jung Kim, Yasuo Inoue, Shigeto Maegawa, Takashi Ipposhi
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Abstract
FS-isolated fields (10a, 10b). LOCOS-isolated fields (11c, 11d). FS-isolated fields (10e, 10f), LOCOS-isolated field (11g, 11h) and FS-isolated field (10i) are arranged in this order. Thus, a master layout can he provided, where SOI transistors having bodies to be supplied with fixed potential and those having bodies not to be supplied with fixed potential are mixed.
Claims6
A semiconductor device, comprising:
- an SOI layer having a first portion extending in a first direction and a second portion extending from said first portion and disposed in a second direction which is different from said first direction;
- a gate electrode having an end portion which covers part of said second portion in said first direction and a main portion which extends from said end portion and covers part of said first portion in said second direction;
- a body of a first conductivity type provided in said first portion which is covered with said main portion;
- and
- a pair of active regions each of a second conductivity type provided in said first portion which is not covered with said main portion;
- wherein said pair of said active regions and said gate electrode constitute an SOI transistor.
3 more elements
Dependencies are inferred from the claim text.