Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
AssigneeSeiko Epson Corporation
InventorsShigenori Katayama, Masahiro Yasukawa
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Abstract
In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.
Claims3
A method for driving an electro-optical apparatus having a transistor provided to each pixel region of a matrix of pixel regions, a gate electrode of the transistor being connected to a first scanning signal line, the method comprising:
- applying a selection potential to the scanning signal line to bring the transistor to a conductive state,
- applying an image signal to the pixel region through a channel region of the transistor,
- applying a non-selection potential to the scanning signal line to bring the transistor to a non-conductive state, and
- draining excessive charges from the channel region in the transistor.
Dependencies are inferred from the claim text.