MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layer
AssigneeKabushiki Kaisha Toshiba
InventorsAtsushi Yagishita, Kouji Matsuo
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Abstract
A semiconductor device in which an NMOSFET and a PMOSFET are formed in a silicon substrate, wherein the gate electrodes of NMOSFET and PMOSFET are made of metallic materials, an Si—Ge layer is formed in at least part of the surface regions including the respective channel layers of the NMOSFET and PMOSFET, and the concentration of Ge in the channel layer of the NMOSFET is lower than the concentration of Ge in the channel layer of the PMOSFET.
Claims18
A semiconductor device in which an NMOSFET and a PMOSFET is formed on a silicon substrate, wherein
- gate electrodes of said NMOSFET and PMOSFET are made of metallic materials,
- an Si—Ge layer is formed in at least part of the surface regions including respective channel layers of said NMOSFET and PMOSFET, and
- the concentration of Ge in the channel layer of said NMOSFET is lower than the concentration of Ge in the channel layer of said PMOSFET.
A semiconductor device in which an NMOSFET has been formed in a silicon substrate, wherein a gate electrode of said NMOSFET is made of metallic material, and
- a tensile-strained Si layer on an Si—Ge layer is used as a channel layer of said NMOSFET.
Dependencies are inferred from the claim text.