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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideto Ohnuma, Shunpei Yamazaki
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In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active layer a crystalline silicon film that was crystallized using nickel (Ni), those regions corresponding to the source/drain thereof are doped with phosphorus; thereafter, thermal processing is performed. During this process, nickel residing in a channel formation region is “gettered” into previously phosphorus-doped regions. With such an arrangement, it becomes possible to reduce the Ni concentration in certain regions in which lightly-doped impurity regions will be formed later, which in turn enables suppression of affection to TFT characteristics.
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
A semiconductor device having at least one thin film transistor, said thin film transistor comprising:
Dependencies are inferred from the claim text.