Structures containing quantum conductive barrier layers
AssigneeInternational Business Machines Corporation
InventorsSusan E. Chaloux, Caroline Aussilhou, Corinne Buchet, Heidi L. Greer, Rajarao Jammy, Patrick Raffin, Francis Rodier, Jean-Marc Rousseau
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Abstract
Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.
Claims15
A deep trench capacitor in a monocrystalline semiconductor substrate, said capacitor comprising (i) a buried plate in said substrate about an exterior portion of a trench in said substrate, (ii) a node dielectric about at least a lower interior portion of said trench, (iii) an electrode in said trench, and (iv) a conductive strap extending away from said trench electrode, the conductive strap being electrically connected to the trench electrode and the monocrystalline substrate, said capacitor further comprising (v) a barrier layer structure between said monocrystalline substrate and said trench electrode, said barrier layer structure comprising a quantum conductive layer with a companion semiconductor material layer, said companion layer differing in degree of crystallinity from said trench electrode.
Dependencies are inferred from the claim text.