Back to results
US 6,310,300 B1Granted
Fluorine-free barrier layer between conductor and insulator for degradation prevention
AssigneeInternational Business Machines Corporation
InventorsEdward C. Cooney, III, Hyun K. Lee, Thomas L. McDevitt, Anthony K. Stamper
Life of this patent
Estimating the term…
Abstract
Integrated circuit structure having improved resistance in metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures.
Claims19
An integrated circuit structure, comprising:
- a substrate;
- a patterned metallization formed on said substrate;
- a fluorine-containing insulator layer formed on said substrate and adjacent said patterned metallization, wherein fluorine migrates from said fluorine-containing insulator layer during formation on said substrate;
- first fluorine-free barrier means for preventing fluorine induced corrosion of said patterned metallization during formation of said flourine-containing insulator layer, said first flourine-free barrier means being located between said fluorine containing insulator layer and said patterned metallization;
- an opening formed through said fluorine-free barrier layer and said fluorine containing insulator layer and communicating with a surface of said patterned metallization;
- metal located within said opening and contacting side walls of said fluorine-free barrier layer and said fluorine containing insulator layer and the surface of said patterned metallization;
- and
- second fluorine-free barrier means for preventing fluorine induced corrosion of a second patterned metallization formed on said second flourine-free barrier means, said second flourine-free barrier means formed on said fluorine-containing insulator layer.
5 more elements
An integrated circuit structure, comprising:
- a substrate;
- a patterned metallization formed on said substrate;
- a fluorine-containing insulator layer formed on said substrate and adjacent said patterned metallization, wherein said fluorine-containing insulator layer includes fluorine which migrates during formation on said substrate;
- a first fluorine-free barrier layer between said fluorine containing insulator layer and said patterned metallization, wherein said first fluorine-free barrier layer comprises a silicon oxide;
- an opening formed through said first fluorine-free barrier layer and said fluorine containing insulator layer and communicating with a surface of said patterned metallization;
- metal located within said opening and contacting side walls of said first and second fluorine-free barrier layers and said fluorine containing insulator layer and the surface of said patterned metallization;
- opening;
- and
- fluorine-free barrier means for preventing fluorine induced corrosion of said second patterned metallization, said fluorine-free barrier means being formed underneath said second patterned metallization.
6 more elements
An integrated circuit structure, comprising:
- a substrate;
- a patterned metallization formed on said substrate;
- a fluorine-containing insulator layer formed on said substrate and adjacent said patterned metallization, wherein said fluorine-containing insulator layer includes fluorine which migrates during formation of said fluorine-containing insulator layer on said substrate;
- a first fluorine-free barrier layer between said fluorine containing insulator layer and said patterned metallization;
- a second fluorine-free barrier layer formed on top of said fluorine containing insulator layer;
- an opening formed through said first and second fluorine-free barrier layers and said fluorine containing insulator layer and communicating with a surface of said patterned metallization;
- metal located within said opening and contacting side walls of said first and second fluorine-free barrier layers and said fluorine containing insulator layer and the surface of said patterned metallization;
- and
- a second patterned metalization formed partly on said metal located within said opening and formed on said second fluorine-free barrier layer, said fluorine-free barrier layer and second fluorine-free barrier layer preventing contact between said fluorine-containing insulator layer and said patterned metallization and said second patterned metallization.
6 more elements
Dependencies are inferred from the claim text.