Beat frequency modulation for plasma generation

A method for plasma assisted etching comprising:

• applying a plurality of differing frequencies to generate at least one beat frequency operable upon plasma source matter and a single electrode;
• generating a plasma;
• and
• etching a substrate assembly coupled to said single electrode at least in part using the plasma.

A method for plasma etching comprising:

• directing to a chamber;
• reacting the gas using energy from a radio frequency (RF) source;
• producing a beat frequency comprising at least two signals of differing frequencies from the RF source and directed to a single electrode;
• providing a pulsed plasma from the reacted gas exposed to the beat frequency;
• and
• etching a wafer coupled to said single electrode with the pulsed plasma.

A method for plasma etching of a workpiece, the method comprising:

• flowing at least one gas;
• generating a plasma from the gas;
• applying a beat modulated radio frequency (RF) signal comprising at least two differing frequencies to the plasma and a single electrode coupled to the workpiece;
• and
• exposing the workpiece to the plasma.

A method for plasma vapor deposition on a workpiece, the method comprising:

• flowing at least one gas;
• generating a plasma from the gas;
• applying a beat modulated radio frequency (RF) signal comprising at least two differing frequencies to the plasma and a single electrode coupled to the workpiece;
• and
• exposing the workpiece to the plasma.

A method for plasma etching a workpiece, the method comprising:

• flowing at least one gas;
• generating a plasma from the at least one gas;
• modulating bias signals of differing frequencies to provide at least one beat frequency to a single electrode coupled to the workpiece;
• applying the bias signals of differing frequencies to the plasma;
• and
• exposing the workpiece to the plasma.

A method for plasma enhanced chemical vapor deposition of at least one layer of material comprising:

• applying a plurality of differing frequencies to plasma source matter and a single electrode;
• generating at least one beat frequency from the plurality of differing frequencies;
• generating a pulsed plasma from the plasma source matter exposed to the at least one beat frequency;
• and
• depositing the at least one layer of material onto a substrate assembly coupled to said single electrode at least in part using the pulsed plasma.

A method for plasma vapor deposition of one or more layers comprising:

• directing one or more gases to a chamber;
• reacting the gases with at least two differing frequencies from a radio frequency (RF) source;
• producing a beat frequency from the at least two differing frequencies;
• producing a pulsed plasma from the gases exposed to the beat frequency;
• and
• depositing the one or more layers on a wafer coupled to said single electrode with the pulsed plasma.