Fabricating low K dielectric interconnect systems by using dummy structures to enhance process

A method of forming an integrated circuit structure comprising:

• depositing a substrate of silicon dioxide;
• providing a first layer of electrically conductive material on said silicon dioxide;
• providing a second layer of electrically conductive material;
• depositing a masking layer on said first layer, said masking layer including a pattern which includes masking for interconnects and masking for dummy structures;
• arranging the dummy structures to provide mechanical properties to an organic polymer insulating material having a dielectric constant below that of silicon oxide, wherein the mechanical properties comprises one or more of hardness, mechanical strength, thermal expansion, and mechanical expansion;
• etching trenches between the dummy structures and interconnects within the first layer of electrically conductive material;
• filling the trenches with the insulating material;
• forming a separating layer between the first layer and the second layer of the electrically conductive material with the insulating material.