Method for crystallizing amorphous silicon
AssigneesLG. Philips LCD Co., Ltd., Jin Jang
InventorsJin Jang, Jong-Kab Park
Life of this patent
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Abstract
A method of crystallizing an amorphous film comprises the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a Co thin film, and crystallizing the amorphous film by forming and electric field in the amorphous film and the Co thin film, while simultaneously subjecting the amorphous film and the Co thin film to a thermal treatment, thereby crystallizing the amorphous film.
Claims41
A method of crystallizing an amorphous silicon film comprising the steps of:
- forming an amorphous silicon layer in which first and second electrodes and a Co thin film located between the first and the second electrodes are formed;
- and
- crystallizing the amorphous silicon film by applying a predetermined voltage to the first and the second electrodes to form an electric field while simultaneously subjecting the amorphous silicon film and the Co thin film to a thermal treatment.
A method of crystallizing an amorphous silicon film comprising the steps of:
- forming the amorphous silicon film on a substrate, the amorphous silicon film being in contact with a Co film;
- and
- crystallizing the amorphous silicon film by forming an electric field in the amorphous silicon film and the Co film, while simultaneously subjecting the amorphous silicon film and the Co film to a thermal treatment;
- wherein the electric field is formed by applying voltage to first and second electrodes each having a thickness of about 1 to 10,000 angstroms.
A method of crystallizing an amorphous silicon film comprising the steps of:
- forming an integral layer above a substrate, wherein the integral layer includes at least one amorphous silicon film and a crystallization inducing film having Co;
- forming an electric field to the amorphous silicon film and the crystallization inducing film;
- and
- heating the amorphous silicon film and the crystallization inducing film to crystallize the amorphous silicon film;
- wherein the electric field is provided by at least two electrodes placed on the integral layer.
A method of crystallizing an amorphous silicon film comprising the steps of:
- forming an integral layer above a substrate, wherein the integral layer includes at least one amorphous silicon film and a crystallization inducing film having Co;
- forming an electric field to the amorphous silicon film and the crystallization inducing film;
- and
- heating the amorphous silicon film and the crystallization inducing film to crystallize the amorphous silicon film;
- wherein the electric field is provided by at least two electrodes which are in contact with the amorphous silicon film.
A method of crystallizing an amorphous silicon film comprising the steps of:
- forming an integral layer above a substrate, wherein the integral layer includes at least one amorphous silicon film and a crystallization inducing film having Co;
- forming an electric field to the amorphous silicon film and the crystallization inducing film;
- and
- heating the amorphous silicon film and the crystallization inducing film to crystallize the amorphous silicon film;
- wherein the electric field is provided by at least two electrodes which are in contact with the crystallization inducing film.
Dependencies are inferred from the claim text.