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US 6,309,945 B1Granted
Process for producing semiconductor substrate of SOI structure
AssigneeCanon Kabushiki Kaisha
InventorsNobuhiko Sato, Takao Yonehara
Life of this patent
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Abstract
A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.
Claims85
A process for producing a semiconductor substrate, comprising the steps of:
- (a) providing a first substrate comprising a monocrystalline semiconductor having a porous monocrystalline semiconductor layer, the porous monocrystalline semiconductor layer having pores with inside walls;
- (b) forming a protective film on the inside walls of the pores of the porous monocrystalline semiconductor layer and on a surface of the porous monocrystalline semiconductor layer;
- (c) removing the protective film formed on the surface of the porous monocrystalline semiconductor layer while retaining the protective film formed on the inside walls of the pores of the porous monocrystalline semiconductor layer,
- (d) forming a non-porous monocrystalline semiconductor layer on the porous monocrystalline semiconductor layer by epitaxial growth;
- (e) bonding the first substrate to a second substrate with an insulating layer therebetween to obtain a multi-layer structure member such that the non-porous monocrystalline semiconductor layer is positioned inside of the multi-layer structure member;
- and
- (f) removing the porous monocrystalline semiconductor layer from the multi-layer structure member by chemical etching.
4 more elements
A process for producing a semiconductor substrate, comprising the steps of:
- (a) providing a first substrate comprising a monocrystalline semiconductor having a porous monocrystalline semiconductor layer, the porous monocrystalline semiconductor layer having pores with inside walls;
- (b) forming a protective film on the inside walls of the pores of the porous monocrystalline semiconductor layer and a surface of the porous monocrystalline semiconductor layer;
- (c) removing the protective film formed on the surface of the porous monocrystalline semiconductor layer while retaining the protective film formed on the inside walls of the pores of the porous monocrystalline semiconductor layer;
- (d) forming a non-porous monocrystalline semiconductor layer on the porous monocrystalline semiconductor layer by epitaxial growth;
- (e) bonding the first substrate to a light-transmissive second substrate to obtain a multi-layer structure member such that the non-porous monocrystalline semiconductor layer is positioned inside of the multi-layer structure member;
- and
- (f) removing the porous monocrystalline semiconductor layer from the multi-layer structure member by chemical etching.
4 more elements
A process for producing a semiconductor substrate, comprising the steps of:
- forming, on a silicon substrate, a non-porous monocrystalline silicon layer having an impurity concentration different from the impurity concentration of the silicon substrate;
- making the silicon substrate porous, to form porous monocrystalline silicon layer, the porous monocrystalline silicon layer having pores with inside walls, the non-porous monocrystalline silicon layer provided on the porous monocrystalline silicon layer together forming a first substrate;
- forming a protective film on the inside walls of the pores of the porous monocrystalline silicon layer, the protective film preventing the porous monocrystalline silicon layer from forming a coarse structure during heat treatment;
- bonding the first substrate to a second substrate with an insulating layer therebetween to form a multi-layer structure member such that the non-porous monocrystalline silicon layer is positioned at an inside of the formed multi-layer structure member;
- and
- removing the porous monocrystalline silicon layer from the multi-layer structure member by chemical etching.
3 more elements
A process for producing a semiconductor substrate, comprising the steps of:
- (a) providing a first substrate comprising a monocrystalline semiconductor having a porous monocrystalline semiconductor layer, the porous monocrystalline semiconductor layer having pores with inside walls:
- (b) forming a protective film of 1-40 nm in thickness on the inside walls of the pores of the porous monocrystalline semiconductor layer;
- (c) forming a non-porous monocrystalline semiconductor layer on the porous monocrystalline semiconductor layer;
- (d) bonding the first substrate to a second substrate to obtain a multi-layer structure member such that the non-porous monocrystalline semiconductor layer is positioned inside of the multi-layer structure member;
- and
- (e) removing the porous monocrystalline semiconductor layer from the multi-layer structure member.
3 more elements
A process for producing a semiconductor substrate, comprising the steps of:
- (a) preparing a first substrate having a porous silicon layer provided on a non-porous silicon substrate;
- (b) forming a protective film on the inside walls of the pores of the porous silicon layer;
- (c) forming a non-porous monocrystalline semiconductor layer on the porous silicon layer;
- (d) bonding the first substrate to a second substrate to form a multi-layer structure member such that the non-porous monocrystalline semiconductor layer is positioned inside of the multi-layer structure member;
- (e) exposing the porous silicon layer;
- and
- (f) removing the porous silicon layer on the second substrate by chemical etching.
4 more elements
A process for producing a semiconductor article, comprising the steps of:
- (a) providing a first substrate comprising a porous layer on a non-porous substrate;
- (b) forming a protective film on the inside walls of the pores of the porous layer;
- (c) forming a non-porous semiconductor layer on the porous layer;
- and
- (d) transferring the non-porous semiconductor layer onto a second substrate via the step of exposing the porous layer.
2 more elements
A process for producing a semiconductor article, comprising the steps of:
- (a) providing a first substrate comprising a porous layer;
- (b) forming a protective film on the inside walls of the pores of the porous layer;
- (c) forming a non-porous semiconductor layer on the porous layer;
- (d) bonding the non-porous semiconductor layer to a second substrate;
- and
- (e) transferring the non-porous semiconductor layer onto a second substrate.
3 more elements
A process for transferring a semiconductor layer, comprising the steps of:
- (a) providing a first substrate comprising a porous layer;
- (b) forming a protective film on the inside walls of the pores of the porous layer;
- (c) forming a non-porous semiconductor layer on the porous layer;
- (d) bonding the non-porous semiconductor layer on the porous layer;
- and
- (e) removing the porous layer on the second substrate by etching.
3 more elements
Dependencies are inferred from the claim text.