Back to results
US 6,309,938 B1Granted
Deuterated bipolar transistor and method of manufacture thereof
AssigneeAgere Systems Guardian Corp.
InventorIsik C. Kizilyalli
Life of this patent
Estimating the term…
Abstract
A bipolar transistor and a method of manufacturing the transistor. The transistor includes: (1) a substrate having a base region, an emitter region and a base-emitter junction between said base and emitter regions and (2) a substantial concentration of an isotope of hydrogen located in said biploar transistor.
Claims9
A method of manufacturing a bipolar transistor, comprising:
- forming a base region, an emitter region and a base-emitter junction between said base and emitter regions in a substrate;
- and
- introducing a substantial concentration of an isotope of hydrogen in said base-emitter junction.
Dependencies are inferred from the claim text.