Stripe photodiode element with high quantum efficiency for an image sensor cell

A method of fabricating a stripe photodiode element, for an image sensor cell, on a semiconductor substrate, featuring a lightly doped, narrow width, serpentine shaped, N type region, in a P well region, comprising the steps of:

• performing a first ion implantation procedure, to form said P well region, in said image sensor cell region, of said semiconductor substrate;
• forming a photoresist shape on said P well region;
• performing a second ion implantation procedure, to form said lightly doped, narrow width, serpentine shaped, N type region, in a first portion of said P well region, exposed in openings in said photoresist shape, creating said stripe photodiode element, comprised of said lightly doped, narrow width, serpentine shaped, N type region, in said first portion of said P well region;
• performing a third ion implantation procedure to form a heavily doped, P type contact region, in a second portion of said P well region;
• and
• performing a fourth ion implantation procedure to form a heavily doped, N type contact region, in a portion of said lightly doped, narrow width, serpentine shaped, N type region.