Method for manufacturing fringe field switching mode liquid crystal display device

A method for manufacturing a fringe field switching mode liquid crystal display device, comprising the steps of:

• forming a gate bus line, a counter electrode structure and a gate pad at an edge of a lower substrate, by sequentially stacking a transparent conductive layer and an opaque metal film on the lower substrate, and patterning a predetermined portion thereof;
• forming an active region by sequentially stacking a gate insulating film, an amorphous silicon layer for a channel and a doped amorphous silicon layer at the upper portion of the lower substrate where the gate bus line and the counter electrode structure have been formed, and by patterning the doped amorphous silicon layer and the amorphous silicon layer for the channel to cover the gate bus line;
• forming a counter electrode by removing the opaque metal film on the exposed counter electrode structure;
• depositing an insulating film on the resultant structure of the lower substrate;
• forming a pixel electrode by forming a transparent conductive layer on the insulating film, and patterning the transparent conductive layer in a comb shape in order to be overlapped with the counter electrode;
• etching the insulating film to open the gate pad, and simultaneously etching the insulating film in the active region;
• and
• forming a data bus line, a source electrode and a drain electrode, by depositing an opaque metal film on the resultant structure of the lower substrate, and patterning the opaque metal film to cross the gate bus line and exist at both sides of the active region, wherein a fringe field being generated when the pixel electrode and the counter electrode have a voltage difference.