Method of manufacturing a ferroelectric film
AssigneeOki Electric Industry Co., Ltd.
InventorTakao Kanehara
Life of this patent
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Abstract
A perovskite crystallized ferroelectric substance is formed over a lower electrode. A precursor solution, which serves as a ferroelectric film, is applied thereto and dried, followed by low-temperature anneal under the condition of a perovskite crystallization temperature or lower. Further, an upper electrode is formed and thereafter subjected to high-temperature anneal at a temperature of the perovskite crystallization temperature or higher to thereby perfectly crystallize the ferroelectric film, whereby a semiconductor element interposed between the electrodes can be formed.
Claims16
A method of manufacturing a ferroelectric film, comprising the following steps:
- forming a first layer of a perovskite crystallized ferroelectric film over a lower electrode formed over a semiconductor substrate;
- applying a precursor solution serving as a second layer of the same ferroelectric film material as the first layer onto the first layer of ferroelectric film;
- heating to evaporate a solvent from the precursor solution;
- forming a pyrochlore structure by annealing the second layer of the ferroelectric film at a perovskite crystallization temperature or lower;
- forming an upper electrode over the second layer of the ferroelectric film;
- and
- transforming the pyrochlore structure into a perovskite structure by annealing the second layer of the ferroelectric film at the perovskite crystallization temperature or higher.
A method of manufacturing a ferroelectric film, comprising the following steps:
- a step for forming a first layer of a perovskite crystallized ferroelectric film over a lower electrode formed over a semiconductor substrate;
- a step for applying a precursor solution serving as a second layer of the same ferroelectric film material onto the first ferroelectric film;
- a step for performing a heating process to evaporate a solvent from the precursor solution;
- forming a pyrochlore structure by annealing the second layer of the ferroelectric film at a perovskite crystallization temperature or lower;
- transforming the pyrochlore structure into a perovskite structure by annealing the second layer of the ferroelectric film at the perovskite crystallization temperature or higher;
- and
- a step for forming an upper electrode over the second layer of the ferroelectric film.
Dependencies are inferred from the claim text.