Method of manufacturing an electronic device comprising two layers of organic-containing material

A method of manufacturing an electronic devices comprising two layers of organic-containing material, said method comprising the steps of:

• applying a first layer of organic-containing material to a substrate,
• covering the first layer of organic-containing material with a first layer of inorganic material,
• applying a second layer of inorganic material which is different from the inorganic material of the first layer,
• providing a first mask layer of resist having first openings,
• then etching through the second layer of inorganic-material at the location of the first openings,
• then etching through the first layer of inorganic material at the location of the first openings,
• applying a second layer of organic-containing material to the first layer of inorganic material,
• covering the second layer of organic-containing material with a third layer of inorganic material,
• applying a fourth layer of inorganic material which is different from the inorganic material of the third layer,
• providing a second mask layer of resist having second openings,
• etching through the fourth layer of inorganic material at the location of the second openings,
• etching through the third layer of inorganic material at the location of the second openings,
• etching through the second layer of organic-containing material at the location of the second openings, characterized in that
• the second layer of inorganic material is etched in an etch process wherein the second inorganic material is selectively etched with respect to the first inorganic material,
• the first mask layer of resist is removed between etching through the second layer of inorganic material and etching through the first layer of inorganic material without affecting the first layer of organic-containing material,
• the fourth layer of inorganic material is etched in an etch process wherein the fourth inorganic material is selectively etched with respect to the third inorganic material,
• the second mask layer of resist is removed between etching through the fourth layer of inorganic material and etching through the third layer of inorganic material without affecting the second layer of organic-containing material,
• etching through the second layer of organic-containing material at the location of the second openings and etching through the first layer of organic-containing material at the location of the first openings take place simultaneously.