Polycrystalline silicon carbide ceramic wafer and substrate
OwnerThomas M. Sullivaninventor
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Abstract
A substrate made of polycrystalline βSiC and having an essentially pore free surface is disclosed. The substrate is adapted for use as a wafer component to support different thinfilms as part of manufacturing for discrete or integrated circuit electronic devices. The substrate comprises a polycrystalline silicon carbide outer surface with {111} crystal planes exposed on the working surface, the outer surface is essentially pore free or without exposed pores, scratches, steps or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.
Claims20
A wafer structure component used in the making of discrete or integrated circuit devices comprising a working surface, at least a portion of the working surface comprising a polycrystalline beta silicon carbide outer surface with {111} crystallographic planes exposed on the working surface, the portion of the working surface being without exposed pores, scratches, steps, or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 0.1 micron, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.
A beta silicon carbide substrate comprising a top and bottom surface, the top surface having an exposed polycrystalline {111} crystallographic plane, and being without exposed pores, scratches, steps, or other such depressions or discontinuities on the surface of the substrate having at least one dimension larger than 2.54 microns, and no non-stoichiometric silicon or carbon other than that which may be residual from the process of making silicon carbide ceramic material.
Dependencies are inferred from the claim text.