Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

A method of manufacturing a refractory metal silicide target comprising a fine mixed structure composed of MSi2 (where M:

• at least one refractory metal selected from W, Mo, Ti, Ta, Zr, Hf, Nb, V, Co, Cr, Ni) grains and Si grains, wherein the number of MSi2 grains independently existing in a cross section of 0.01 mm2 of the mixed structure is not greater than 15, the MSi2 grains have an average grain size not greater than 10 μm, whereas free Si grains existing in gaps of the MSi2 grains have a maximum grain size not greater than 20 μm, the method comprising the processes of:
• I. preparing a mixed powder by mixing a refractory metal powder having a maximum grain such that a Si/M atomic ratio is 2-4;
• II. synthesizing a refractory metal silicide as well as forming a semi-sintered body by charging the mixed powder into a vessel and heating the powder up to 1300° C. in vacuum;
• III. preparing a crushed powder by crushing the semi-sintered body in vacuum or in an inert gas atmosphere;
• and
• IV. charging the crushed powder into a compacting mold, increasing the temperature of the crushed powder to just below an eutectic temperature in vacuum or in an inert gas atmosphere at a temperature less than 1200° C. while applying a low pressing pressure of 10-50 kg/cm2 to the crushed powder, and then densifying the powder under a high pressing pressure of 200-500 kg/cm2.