Back to results
US 6,309,560 B1Granted
Chemical mechanical polishing slurry useful for copper substrates
AssigneeCabot Microelectronics Corporation
InventorsVlasta Brusic Kaufman, Rodney C. Kistler, Shumin Wang
Life of this patent
Estimating the term…
Abstract
A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
Claims19
A chemical mechanical polishing slurry comprising:
- an abrasive;
- urea hydrogen peroxide;
- from about 0.5 to 5.0 wt % tartaric acid;
- and
- a film forming agent.
2 more elements
A chemical mechanical polishing slurry comprising:
- from about 1.0 to about 15.0 weight percent of an alumina abrasive;
- from about 0.3 to about 12.0 weight percent urea hydrogen peroxide;
- from about 0.5 to about 3.0 weight percent tartaric acid;
- and
- from about 0.01 to about 0.2 weight percent benzotriazole, the chemical mechanical polishing slurry having a pH of from about 4.0 to about 9.0.
2 more elements
A CMP slurry precursor comprising from 2.0 wt % to about 24.0 wt % urea;
- from about 1.0 to about 15.0 wt % alumina, from about 0.5 to about 5.0 wt % tartaric acid, from about 0.01 to about 0.2 wt % benzotriazole.
Dependencies are inferred from the claim text.