Method for fabricating silicon thin film

Abstract

This invention provides a method for fabricating a silicon thin film which is high in supply efficiency of silicon material. In the method for fabricating a silicon thin film by placing a silicon semiconductor single crystal substrate in a process vessel and by supplying a silicon material into the process vessel, a wall of the process vessel is cooled so that silicon tetrachloride (SiCl4) concentration in an exhaust gas discharged from the process vessel during a growth process of a silicon thin film becomes equal to or lower than {fraction (1/10)} of a concentration of the silicon material in the exhaust gas. Also, the wall of the process vessel is cooled so that temperature gradient between a surface of the semiconductor single crystal substrate and the wall of the process vessel satisfies the following Equation (1) in relation to a temperature of the semiconductor single crystal substrate: temperature gradient(K/cm)≧0.3×substrate temperature(K)−90  (1).

Dependencies are inferred from the claim text.