Polishing pad conditioner for semiconductor substrate
AssigneeNippon Steel Corporation
InventorToshiya Kinoshita
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Abstract
There is provided a conditioner which eliminates loading of a polishing pad, stabilizes polishing speeds and has a long usable life in metal CMP employing acidic slurry, which allows production of semiconductors at high quality and high yield, and which is characterized in that diamond grains are supported by monolayer brazing in a supporting material comprising a metal and/or alloy, using an alloy with a melting point of 600-1200° C. which contains 0.5-20 wt % of at least one metal selected from among titanium, zirconium and chromium and 30-99.5 wt % of at least one metal selected from among gold, platinum and silver.
Claims5
A conditioner for a polishing pad used for flat polishing processes for semiconductor substrates, wherein diamond grains are supported by monolayer brazing in/on a supporting material comprising a metal and/or alloy, using an alloy with a melting point of 600-1200° C. which consists essentially of 0.5-20% by weight of at least one metal selected from the group consisting of titanium, zirconium and chromium and 30-99.5% by weight of at least one metal selected from the group consisting of gold, platinum and silver, said alloy with the melting point of 600-1200° C. having an improved corrosion resistance compared to nickel electrodeposition with respect to an acidic slurry.
Dependencies are inferred from the claim text.