Method for achieving anti-parallel exchange coupling with one biased layer having low coercivity
AssigneeHeadway Technologies, Inc.
InventorsSimon H. Liao, Min Li
Life of this patent
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AssigneeHeadway Technologies, Inc.
InventorsSimon H. Liao, Min Li
Estimating the term…
A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.
A method of forming a dual stripe, magnetoresistive head comprising the steps as follows:
Dependencies are inferred from the claim text.