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US 6,307,781 B1Granted
Two transistor flash memory cell
AssigneeInfineon Technologies AG
InventorDanny Pak-Chum Shum
Life of this patent
Estimating the term…
Abstract
A two transistor cell NOR architecture flash memory is provided wherein the floating gate transistor is couple between the selection transistor and an associated bit line. The flash memory is deposited within a triple well and operates according to a Fowler-Nordheim tunnel mechanism. Programming of memory cells involves tunneling of carriers through gate oxide from a channel region to a floating gate rather than tunneling from a drain or source region to the floating gate.
Claims4
A flash memory comprising:
- an array, having a NOR architecture, of selection gate lines, wordlines, bit lines and a plurality of memory cells, each said memory cell comprising a floating gate transistor connected to a selection transistor, said floating gate transistor being operable to couple said selection gate transistor to an associated cell bit line according to a method whereby carriers tunnel through gate oxide of the floating gate transistor from a channel region to the floating gate , each said memory cell being formed within a triple well including a first well of a first conductivity type within a second well of a second conductivity type within a third well of said first conductivity type.
A flash memory comprising:
- an array, having a NOR architecture, of selection gate lines, wordlines, bit lines and a plurality of n-channel memory cells, each said memory cell comprising a floating gate transistor connected to a selection transistor, said floating gate transistor being operable to couple said selection gate transistor to an associated cell bit line according to a method whereby carriers tunnel through gate oxide of the floating gate transistor from a channel region to the floating gate , each said memory cell being formed within a triple well including a first well of a first conductivity type within a second well of a second conductivity type within a third well of said first conductivity type.
Dependencies are inferred from the claim text.