Nonvolatile semiconductor memory device and a method of fabricating the same
AssigneeSanyo Electric Co., Ltd.
InventorYukihiro Oya
Life of this patent
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Abstract
A nonvolatile semiconductor memory device of the present invention comprises: an isolation film formed on a semiconductor substrate of one conductivity type; a floating gate which is formed in an active region isolated by said isolation film so as to be disposed in a gap between adjacent isolation films and make each of end portions coincident with each end of said isolation film in a self-aligned manner; a tunnel oxide film which covers said floating gate; a control gate formed on said tunnel oxide film so as to comprise a region which overlaps said floating gate; a diffusion region of an opposite conductivity type and formed in a surface of the semiconductor substrate adjacent to said floating gate and the control gate.
Claims9
A nonvolatile semiconductor memory device comprising:
- an element isolation film formed on a semiconductor substrate of one conductivity type;
- a floating gate which is formed in an active region isolated by said element isolation film so as to be disposed in a gap between adjacent element isolation films and make each of end portions coincident with each end of said adjacent element isolation films in a self-aligned manner;
- a tunnel oxide film which covers said floating gate;
- a control gate formed on said tunnel oxide film comprising a region which overlaps said floating gate;
- and
- a diffusion region of an opposite conductivity type and formed in a surface of said semiconductor substrate adjacent to said floating gate and said control gate.
Dependencies are inferred from the claim text.