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US 6,307,731 B1Granted
Dielectric capacitor and memory and method of manufacturing the same
AssigneeSony Corporation
InventorKenji Katori
Life of this patent
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AssigneeSony Corporation
InventorKenji Katori
Estimating the term…
Provided are a dielectric capacitor, in which micorfabrication is easily performed, a memory and a method of manufacturing the dielectric capacitor and the memory. A bottom electrode, a dielectric film and a top electrode are sequentially provided on a substrate portion. The bottom electrode comprises an adhesive layer including IrHf, a precious metal layer including Ir, an oxygen inclusion layer including IrHfO and, a precious metal layer including Ir in sequence on the substrate portion. The top electrode comprises, a precious metal layer including Ir and an oxygen inclusion layer including IrHfO in sequence on the dielectric film. Since platinum is not used for the top electrode and the bottom electrode, microfabrication thereof is facilitated Further, the top electrode is deposited before crystallizing or crystal growing the dielectric film, and thereby the top electrode and the bottom electrode can be processed by etching. As a result, etching can be performed on its smooth surface, allowing easier microfabrication.
A dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, the second electrode comprising:
A memory comprising:
A method of manufacturing a dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, wherein the step of forming the second electrode includes,
A method of manufacturing a memory, the memory having a dielectric capacitor which is supported by a substrate portion and in which a first electrode, a dielectric film and a second electrode are formed sequentially on the substrate portion, the step of forming the second electrode comprising:
Dependencies are inferred from the claim text.