Thin film magnetic head

The thin film magnetic head being composed of at least a lower shield layer, a lower gap layer formed on the lower shield layer, a magnetoresistive element layer formed on the lower gap layer, a lead layer for imparting a sensing current to the magnetoresistive element layer, said lead layer being formed on both sides of the magnetoresistive element layer, an upper gap layer formed on the lead layer, and an upper shield layer formed on the upper gap layer,

• wherein the upper gap layer comprises an Al—N—X insulating layer, the element X being at least one element selected from the group consisting of Si, B, Cr, Ti, Ta and Nb, and
• wherein said insulating layer contains the element X in a composition ratio of 2.0 to 30.0 atomic percent.

A thin film magnetic head being composed of at least a lower shield layer, a lower gap layer formed on said lower shield layer, a magnetoresistive element layer formed on said lower gap layer, a lead layer for imparting a sensing current to said magnetoresistive element layer, said lead layer being formed on both sides of the magnetoresistive element layer, an upper gap layer formed on said lead layer, and an upper shield layer formed on said upper gap layer,

• wherein said lower gap layer is comprised of an AlN film having a mean crystal grain size ranging from 85 angstroms to 130 angstroms, and
• wherein the (002) plane of a crystalline layer of said AlN film is in preferred orientation in the direction perpendicular to the film plane.

The thin film magnetic head being composed of at least a lower shield layer, a lower gap layer formed on said lower shield layer, a magnetoresistive element layer formed on said lower gap layer, a lead layer for imparting a sensing current to said magnetoresistive element layer, said lead layer being formed on both sides of the magnetoresistive element layer, an upper gap layer formed on said lead layer, and an upper shield layer formed on said upper gap layer,

• wherein said upper gap is comprised of an AlN film having a mean crystal grain size ranging from 85 angstroms to 130 angstroms, and
• wherein the (002) plane of a crystalline layer of said AlN film is in preferred orientation in the direction perpendicular to the film plane.

A thin film magnetic head being composed of at least a lower shield layer, a lower gap layer formed on said lower shield layer, a magnetoresistive element layer formed on said lower gap layer, a lead layer for imparting a sensing current to said magnetoresistive element layer, said lead layer being formed on both sides of the magnetoresistive element layer, an upper gap layer formed on said lead layer, and an upper shield layer formed on said upper gap layer,

• wherein said lower gap layer is comprised of an AlN film having a lattice parameter ranging from 2.67 angstroms to 2.7 angstroms, and
• wherein the (002) plane of a crystalline layer of said AlN film is in preferred orientation in the direction perpendicular to the film plane.

The thin film magnetic head being composed of at least a lower shield layer, a lower gap layer formed on said lower shield layer, a magnetoresistive element layer formed on said lower gap layer, a lead layer for imparting a sensing current to said magnetoresistive element layer, said lead layer being formed on both sides of the magnetoresistive element layer, an upper gap layer formed on said lead layer, and an upper shield layer formed on said upper gap layer,

• wherein said upper gap layer is comprised of an AlN film having a lattice parameter ranging from 2.67 angstroms to 2.7 angstroms, and
• wherein the (002) plane of a crystalline layer of said AlN film is in preferred orientation in the direction perpendicular to the film plane.