Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• an encapsulation element made of insulating resin;
• a support substrate made of metal covered at least in a part thereof by said encapsulation element and uncovered by said encapsulation element at a lower surface thereof;
• a second electrode lead and a control lead protruding in parallel from one side surface of said encapsulation element;
• a semiconductor chip covered by said encapsulation element and having a first electrode on a lower surface thereof and a second electrode and a control electrode on an upper surface thereof, the lower surface being secured to said support substrate through a conductive bonding material;
• and
• wires positioned in said encapsulation element for establishing electrical connection between said second electrode and said second electrode lead and between said control electrode and said control electrode lead, wherein
• said second electrode lead has a structure in which the width of a wire connection portion thereof to which wires are connected is greater than the width of a wire connection portion of said control electrode lead, and in which a plurality of leads extend in parallel from the wire connection portion.

A semiconductor device comprising:

• an encapsulation element made of insulating resin;
• a support substrate made of metal covered at least in a part thereof by said encapsulation element and uncovered by said encapsulation element at a lower surface thereof;
• a suspended lead contiguous with said support substrate protruding from one side surface of said encapsulation element;
• a second electrode lead and a control electrode lead protruding in parallel from said one side surface of said encapsulation element;
• a semiconductor chip covered by said encapsulation element and having a first electrode on a lower surface thereof and a second electrode and a control electrode on an upper surface thereof, the lower surface being secured to said support substrate through a conductive bonding material;
• and
• wires positioned in said encapsulation element for establishing electrical connection between said second electrode and said second electrode lead and between said control electrode and said control electrode lead, wherein
• at least the width of a wire connection portion of said second electrode lead to which wires are connected is greater than the width of a wire connection portion of said control electrode lead.

A semiconductor device comprising:

• an encapsulation element made of insulating resin;
• a support substrate made of metal covered at least in a part thereof by said encapsulation element and uncovered by said encapsulation element at a lower surface thereof;
• a second electrode lead and a control electrode lead protruding in parallel from said one side surface of said encapsulation element;
• a semiconductor chip covered by said encapsulation element and having a first electrode on a lower surface thereof and a second electrode and a control electrode on an upper surface thereof, the lower surface being secured to said support substrate through a conductive bonding material;
• and
• wires positioned in said encapsulation element for establishing electrical connection between said second electrode and said second electrode lead and between said control electrode and said control electrode lead, wherein
• the width of a wire connection portion of said second electrode lead to which wires are connected is greater than the width of a wire connection portion of said control electrode lead.

A semiconductor device comprising:

• a semiconductor chip having a first surface and a second surface opposite to said first surface, said semiconductor chip having a gate electrode and a source electrode formed on said first surface respectively and a drain electrode formed on said second surface;
• a gate lead having an inner portion and an outer portion which is continuous with said inner portion;
• source leads each having an inner portion and an outer portion which is continuous with said inner portion;
• a drain lead being electrically connected with said drain electrode of said semiconductor chip;
• a first wire electrically connecting said gate electrode with said inner portion of said gate lead;
• second wires electrically connecting said source electrode with said inner portion of said source leads respectively;
• and
• an encapsulating resin having a tetragonal shape, said encapsulating resin having an upper surface, a rear surface opposite to said upper surface and side surfaces between said upper and rear surfaces, said encapsulating resin sealing said semiconductor chip, said inner portions of said gate and source leads and said first and second wires,
• wherein said outer portions of said gate and source leads protrude outwardly from one of said side surfaces of said encapsulating resin, and
• wherein tips of said inner portions of said source leads are integrally formed with each other, and one ends of said second wires are bonded to said tips of said inner portions of said source leads.

A semiconductor device comprising:

• a semiconductor chip having a first surface and a second surface opposite to said first surface, said semiconductor chip having a gate electrode and a source electrode formed on said first surface respectively and a drain electrode formed on said second surface;
• a gate lead having an inner portion and an outer portion which is continuous with said inner portion;
• a first source lead having an inner portion and an outer portion which is continuous with said inner portion;
• a second source lead having an inner portion and an outer portion which is continuous with said inner portion;
• a drain lead being electrically connected with said drain electrode of said semiconductor chip;
• a first wire electrically connecting said gate electrode with said inner portion of said gate lead;
• second wires electrically connecting said source electrode with said inner portions of said first and second source leads respectively;
• and
• an encapsulating resin having a tetragonal shape, said encapsulating resin having an upper surface, a rear surface opposite to said upper surface and side surfaces between said upper and rear surfaces, said encapsulating resin sealing said semiconductor chip, said inner portions of said gate and source leads and said first and second wires,
• wherein said outer leads of said gate and source leads protrude outwardly from one of said side surfaces of said encapsulating resin and respectively extend in a first direction,
• wherein tips of said inner portions of said second leads are continuously formed with each other by a link portion extending in a second direction which is substantially perpendicular to said first direction, and
• wherein one ends of said second wires are bonded to said link portion which is continuously formed with said tips of said inner portions of said first and second source leads.