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US 6,307,265 B1Granted
Feasible, gas-dielectric interconnect process
AssigneeKabushiki Kaisha Toshiba
InventorsMinakshisundaran Balasubramanian Anand, Hideki Shibata, Masaki Yamada
Life of this patent
Estimating the term…
Abstract
Wires are provided on an insulating layer, reaching the source region and drain region of a MOS transistor. Each wire is composed of a conductor and a barrier layer covering the surfaces of the conductor. An insulating layer is mounted on the wires, an insulating layer on the insulating layer, and an insulating layer on the insulating layer. Cavities are provided among the wires. The cavities are filled with air or a mixture gas of oxygen and carbon dioxide. Wires are provided on the insulating layer. Cavities are provided among the wires. These cavities are filled with air or a mixture gas of oxygen and carbon dioxide.
Claims85
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on the semiconductor substrate;
- wires of a first set provided on the first insulating layer;
- first barrier layers provided on side-walls of the wires of the first set;
- a second insulating layer having via holes and formed on the wires of the first set, providing complete cavities among the wires of the first set;
- wires of a second set provided on the second insulating layer;
- second barrier layers provided on side-walls of the wires of the second set;
- conductors of a first set filled in the via holes of the second insulating layer and connecting the wires of the first set to the wires of the second set;
- and
- a third insulating layer provided on the wires of the second set providing complete cavities among the wires of the second set.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate having a surface region;
- a semiconductor element provided in the surface region of the semiconductor substrate;
- a first insulating layer provided on the semiconductor substrate, covering the semiconductor element and having contact holes;
- wires of a first set provided on the first insulating layer;
- barrier layers provided on side-walls of the wires;
- conductors of a first set provided in the contact holes of the first insulating layer and connecting the semiconductor element to the wires of the first set;
- and
- a second insulating layer having via holes and formed on the wires of the first set, provided complete cavities among the wires of the first set.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor layer;
- wires of a first set provided on said first insulating layer;
- first barrier layers provided on side-walls of the wires of the first set;
- a second insulating layer having contact holes and provided on said wires of the first set, providing complete cavities among said wires of the first set;
- second barrier layers provided on side-walls of the wires of the second set;
- a plurality of columnar conductors provided in the contact holes of said second insulating layer, extending upwards and connected to said wires of the first set;
- a third insulating layer having contact holes and provided on said columnar conductors, providing complete cavities among said columnar conductors;
- wires of a second set provided on said third insulating layer, extending through the contact holes of said third insulating layer and connected to said columnar conductors;
- and
- a fourth insulating layer provided on said wires of the second set, providing complete cavities among said wires of the second set.
8 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor layer;
- wires of a first set provided on said first insulating layer;
- first barrier layers provided on side-walls of the wires of the first set;
- a second insulating layer having contact holes and provided on said wires of the first set, providing complete cavities among said wires of the first set;
- wires of a second set connected to said wires of the first set, each consisting of an upper part shaped like a strip and a columnar lower part having a lower end formed in one contact of said second insulating layer;
- second barrier layers provided on side-walls of the wires of the second set;
- a third insulating layer provided at a junction between the upper parts, on one hand, and lower parts, on the other, of said wires of the second set;
- and
- a fourth insulating layer provided on said wires of the second set, providing complete cavities among the upper parts of said wires of the second set.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a plurality of wires provided on said first insulating layer;
- a second insulating layer provided above said wires, providing complete cavities among said wires;
- and
- coupling layers each interposed between a corresponding wire and said second insulating layer, each coupling layer in contact with said corresponding wire and said insulating layer over an entire length of said corresponding wire covered by said insulating layer, and firmly coupling said wire with said second insulating layer, wherein said second insulating layer is made of silicon oxide, and said coupling layers are made of material obtained by reacting silicon with the material of said wires.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a plurality of wires provided on said first insulating layer;
- a second insulating layer provided above said wires, providing complete cavities among said wires;
- and
- coupling layers each interposed between a corresponding wire and said second insulating layer, each coupling layer in contact with said corresponding wire and said insulating layer over an entire length of said corresponding wire covered by said insulating layer, and firmly coupling said wire with said second insulating layer, wherein said second insulating layer is a metal oxide layer, and said coupling layers are made of material obtained by reacting the metal of said metal oxide layer with the material of said wires.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on the said semiconductor substrate;
- a plurality of wires provided on said first insulating layer;
- metal oxide or nitride layers provided on the sides of said wires and defining cavities among said wires;
- metal layers interposed between said first insulating layer and said wires;
- and
- a second insulating layer provided on said wires and said metal oxide or nitride layers.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a plurality of wires provided on the first insulating layer;
- wire-protecting metal layers, each covering sides and bottom of one wire and prohibiting passage of oxygen;
- wire-protecting layers, each covering a top of one wire and prohibiting passage of oxygen;
- and
- a second insulating layer provided on said wire-protecting layers, defining complete cavities among said wires.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a wire provided on said first insulating layer;
- and
- a second insulating layer covering sides and top of said wire and spaced apart from said wire, providing a complete cavity around said wire.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a wire provided on said first insulating layer;
- and
- a second insulating layer covering a side of said wire and spaced apart from the side of said wire, providing a complete cavity which is adjacent to the side of said wire.
2 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating layer on a semiconductor substrate;
- forming a conductive layer on said first insulating layer;
- forming a first solid layer on said conductive layer;
- etching said first solid layer and said conductive layer, thereby forming a plurality of wires;
- forming second solid layers on sides of said wires;
- forming a second insulating layer on said first and second solid layers;
- oxidizing said first and second solid layers, changing the same into gas layers, whereby said wires are placed in the gas layers.
4 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating layer on a semiconductor substrate;
- forming a conductive layer on said first insulating layer;
- etching said conductive layer, thereby forming a plurality of wires;
- forming solid layers on sides of said wires;
- forming a second insulating layer on said solid layers and touching said first insulating layer adjacent said solid layers;
- and
- oxidizing said solid layers, changing the same to gas layers, whereby the sides of each wire are located in a gas layer.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a plurality of wires provided on said first insulating layer;
- barrier layers provided on side-walls of the wires;
- and
- a second insulating layer provided on said wires, providing a complete cavity among said wires, which is filled with a mixture gas consisting of at least oxygen and carbon dioxide, said second insulating layer in contact with said wires, said second insulating layer having a flat lower surface completely covering the complete cavities among said wires.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on the semiconductor substrate;
- wires of a first set provided on the first insulating layer;
- a second insulating layer having via holes and formed on the wires of the first set, providing complete cavities among the wires of the first set so that walls of adjacent wires of the first set define a complete cavity extending between the adjacent wires;
- wires of a second set provided on the second insulating layer;
- conductors of a first set filled in the via holes of the second insulating layer and connecting the wires of the first set to the wires of the second set;
- a third insulating layer provided on the wires of the second set, providing complete cavities among the wires of the second set so that walls of adjacent wires of the second set define a complete cavity extending between the adjacent wires;
- and
- a first guard ring provided on said first insulating layer, being similar in structure to the wires, and surrounding the wires.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate having a surface region;
- a semiconductor element provided in the surface region of the semiconductor substrate;
- a first insulating layer provided on the semiconductor substrate, covering the semiconductor element and having contact holes;
- wires of a first set provided on the first insulating layer;
- conductors of a first set provided in the contact holes of the first insulating layer and connecting the semiconductor element to the wires of the first set;
- a second insulating layer having via holes and formed on the wires of the first set, providing complete cavities among the wires of the first set so that walls of adjacent wires of the first set define a complete cavity between the adjacent wires;
- wires of a second set provided on said second insulating layer;
- conductors of a second set provided in via holes of said second insulating layer and connecting said wires of the first set to said wires of the second set;
- a third insulating layer provided on said second insulating layer, providing complete cavities among said wires of the second set;
- and
- a guard ring comprising a first portion provided on said first insulating layer, being similar in structure to said wires of the first set and surrounding said wires of the first set, and a second portion provided on said second insulating layer, being similar in structure to said wires of the second set and surrounding said wires of the second set.
8 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- wires of a first set provided on said first insulating layer;
- a second insulating layer having contact holes and provided on said wires of the first set, providing complete cavities among said wires of the first set so that walls of adjacent wires of the first set define a complete cavity between the adjacent wires;
- a plurality of columnar conductors provided in the contact holes of said second insulating layer, extending upwards and connected to said wires of the first set;
- a third insulating layer having contact holes and provided on said columnar conductors, providing complete cavities among said columnar conductors;
- wires of a second set provided on said third insulating layer, extending through the contact holes of said third insulating layer and connected to said columnar conductors;
- a fourth insulating layer provided on said wires of the second set, providing complete cavities among said wires of the second set so that walls of adjacent wires of the second set define a complete cavity between the adjacent wires;
- and
- a guard ring comprising a first portion provided on said first insulating layer, being similar in structure to said wires of the first set and surrounding said wires of the first set, a second portion provided on said third insulating layer, being similar in structure to said wires of the second set and surrounding said wires of the second set, and a third portion provided between said wires of the first set on the one hand and the wires of the second set on the other hand, being similar in structure to said conductors and surrounding said conductors.
7 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- wires of a first set provided on said first insulating layer;
- a second insulating layer having contact holes and provided on said wires of the first set, providing complete cavities among said wires of the first set so that walls of adjacent wires of the first set define a complete cavity between the adjacent wires;
- wires of a second set connected to said wires of the first set, each consisting of an upper part shaped like a strip and a columnar lower part having a lower end formed in one contact of said second insulating layer;
- a third insulating layer provided at a junction between the upper parts, on one hand, and lower parts, on the other, of said wires of the second set;
- a fourth insulating layer provided on said wires of the second set, providing complete cavities among the upper parts of said wires of the second set so that the upper parts of adjacent wires of the second set define a complete cavity between the adjacent wires;
- and
- a guard ring comprising a first portion provided on said first insulating layer, being similar in structure to said wires of the first set and surrounding said wires of the first set, and a second portion provided on said second insulating layer, being similar in structure to said wires of the second set and surrounding said wires of the second set.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating layer provided on said semiconductor substrate;
- a plurality of wires provided on said first insulating layer;
- and
- a second insulating layer provided on said wires, providing a complete cavity among said wires filled with a mixture gas consisting of at least oxygen and carbon dioxide,
- wherein the carbon dioxide in said cavity has a concentration higher than in the atmosphere.
3 more elements
Dependencies are inferred from the claim text.