Schottky barrier semiconductor device

Abstract

A Schottky barrier semiconductor device comprises an n+-type semiconductor substrate, an n−-type semiconductor layer grown on the semiconductor substrate by epitaxial growth, and two or more adjacent p+-type semiconductor regions formed on a surface of the semiconductor layer. The device comprises a metal layer having a Schottky barrier on the surface of an active region of the semiconductor layer. The p+-type semiconductor regions are formed so that a ratio of a distance between the adjacent p+-type semiconductor regions to a distance between the bottom surface of the p+-type semiconductor region and the bottom surface of the semiconductor layer may be the ratio of 1 to 1 through 2. And/or a thickness of the n−-type semiconductor layer that is the active region which does not have the adjacent p+-type semiconductor regions may be less than the distance between the upper surface of the p+-type semiconductor region and the upper surface of the semiconductor substrate. Consequently, the Schottky barrier semiconductor device is obtained which has a low forward voltage with a reverse leakage current reduced and can thus achieve a power saving and be driven at a low voltage.

Dependencies are inferred from the claim text.