Semiconductor photo-detector with square-shaped optical wave-guide
AssigneeNEC Corporation
InventorMitsuhiro Sugiyama
Life of this patent
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Abstract
A semiconductor photo-detector, which has a high quantum efficiency due to high coupling with an incident beam and operates at higher frequency due to a reduced area of PN junction. In a semiconductor photo-detector of the present invention, reflection layers are deposited on both of the parallel surfaces of a square-shaped wave-guide, while light absorption layers are deposited on at least another pair of parallel surfaces which is one of the parallel pairs of remaining surfaces.
Claims8
A semiconductor photo-detector which includes a square-shaped optical wave-guide, comprising:
- reflection layers deposited on a pair of parallel surfaces of said square-shaped optical wave-guide;
- and
- absorption layers deposited on at least another pair of the parallel surfaces of said square-shaped optical wave-guide,
- wherein said parallel surfaces form a groove with a non-light-absorbing central portion.
A semiconductor photo-detector which includes a square-shaped optical wave-guide, comprising:
- reflection layers deposited on a pair of parallel surfaces of said square-shaped wave-guide;
- and
- absorption layers deposited on at least another pair of the parallel surfaces of said square-shaped wave-guide,
- wherein said reflection layers are deposited on the upper surface and the lower surface of said wave-guide, when the longitudinal direction of said wave-guide is along the horizontal direction.
A semiconductor photo-detector which includes a square-shaped optical wave-guide comprising:
- reflection layers deposited on a pair of parallel surfaces of said square-shaped wave-guide;
- and
- absorption layers deposited on at least another pair of the parallel surfaces of said square-shaped wave-guide;
- wherein said absorption layers are deposited on the vertical surfaces of said wave-guide, when the longitudinal direction of said wave-guide is along the horizontal direction.
A semiconductor photo-detector which includes a square-shaped optical wave-guide, comprising:
- reflection layers deposited on a pair of parallel surfaces of said square-shaped wave-guide;
- absorption layers deposited on at least another pair of the parallel surfaces of said square-shaped wave-guide, and
- wherein electrodes are deposited on surfaces which are different from the surface which is an incident surface of a signal light beam, and
- wherein said electrodes are deposited on said reflection layers.
Dependencies are inferred from the claim text.