Integrable ferromagnets for high density storage

A material comprising a semiconductor with one or more ferromagnets integrated into it by ion implantation and annealing of a precursor thereto,

• wherein the resulting semiconductor remains optically active;
• and
• wherein said ferromagnets are at a density of at least 1014 cm−2 in the semiconductor, and are ferromagnetic at room temperature with a Curie temperature between about 400 to 700 K.

A product produced by a process comprising the steps of:

• a) implanting ferromagnet precursors into a substrate at a density of at feast 1014 cm−2 in the substrate, by ion implantation with the aim of producing ferromagnets;
• and
• b) annealing the substrate to generate ferromagnets therein, said ferromagnets possessing ferromagnetic properties at room temperature and having a Curie temperature above about 400 K.

A device containing a material comprising a semiconductor with one or more ferromagnets integrated into it by ion implantation and annealing of a precursor thereto,

• wherein said ferromagnets are at a density of at least 1014 cm−2 in the substrate, have a Curie temperature between about 400 K to 700 K and are ferromagnetic at room temperature;
• and
• wherein said material retains the same, substantially the same or similar optical and/or electrical transport properties of the semiconductor before the integration of the ferromagnets into the semiconductor.

An optically active semiconductor containing ferromagnets between 10 nm to 50 nm in size which exhibit room temperature ferromagnetism.

A material comprising a semiconductor with one or more ferromagnets integrated into it by ion implantation and annealing of a precursor thereto, said ferromagnets having no substantial effect on the current transport properties of said semiconductor;

• and
• wherein said ferromagnets are at a density of at least 1014 cm−2 in the substrate, are ferromagnetic at room temperature and have a Curie temperature between about 400 K to 700 K.