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US 6,307,227 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeNEC Corporation
InventorHiroki Fujii
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AssigneeNEC Corporation
InventorHiroki Fujii
Estimating the term…
A semiconductor device having a capacitor, a bipolar transistor and complementary MOSFETs on a semiconductor substrate, the capacitor being constituted from a first electrode 8, a second electrode 13 separated from the first electrode by an insulating film 11 and a third electrode 15 separated from the second electrode by another insulating film 14 and connected to the first electrode is manufactured; where all electrodes in the capacitor and insulating films between them are formed simultaneously with other manufacturing steps of a bipolar transistor or the MOSFETs. This manufacturing method can produce a semiconductor device such as a Bi-CMOS and the like, which is capable of large scale integration and has a capacitor with a large capacitance but occupying only a small area, with a high efficiency and a low cost.
A semiconductor device having, upon a semiconductor substrate, a capacitor comprising a first electrode, a second electrode separated from the first electrode by an insulating film, a third electrode separated from the second electrode by an insulating film and connected to the first electrode;
A semiconductor device having, upon a semiconductor substrate, a capacitor constituted from a first electrode, a second electrode separated from the first electrode by an insulating film, a third electrode separated from the second electrode by an insulating film and connected to the first electrode and a fourth electrode formed in the semiconductor substrate, along the first electrode over an insulating film and connected to the second electrode;
Dependencies are inferred from the claim text.