Light-emitting device comprising gallium-nitride-group compound semiconductor
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYasunari Oku, Hidenori Kamei
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Abstract
An n-type clad layer, a light-emitting layer, a p-type clad layer of gallium-nitride-group compound semiconductor are stacked on a substrate in the order. The composition distribution of gallium-nitride-group compound semiconductor forming the p-type clad layer is varied in the direction of layer thickness at a substantially continuous change rate, or it is varied in change rate of the stepping mode, so as the forbidden band width gradually decreases along with an increasing distance from the light-emitting layer. With the above-described structure, the operating voltage is lowered, while the luminous efficiency is improved.
Claims8
A gallium-nitride-group compound semiconductor light-emitting device comprising an n-type clad layer, a light-emitting layer and a p-type clad layer of gallium-nitride-group compound semiconductor stacked in the order on a substrate,
- wherein said light-emitting layer is formed of Ina Gal-a N (0<a≦1),
- said p-type clad layer is formed of Alx Iny Gal-x-y N (0<×<1, 0≦y<1), of which a composition distribution is varied in a direction of layer thickness so as a forbidden band width gradually decreases along with an increasing distance from said light-emitting layer, and
- a p-side electrode is formed in contact with said p-type clad layer.
A gallium-nitride-group compound semiconductor light-emitting device comprising an n-type clad layer, a light-emitting layer and a p-type clad layer of gallium-nitride-group compound semiconductor stacked in the order on a substrate,
- wherein said light-emitting layer is formed Ina Ga1-a N (0<a≦1),
- said p-type clad layer is formed of Alx Iny Gal-x-y N (0<×<1, 0≦y<1), of which a composition distribution is varied in a direction of layer thickness so as a forbidden band width gradually decreases along with an increasing distance from said light-emitting layer,
- a p-type contact layer of p-type Alu Inv Ga1-u-v N (0≦u<1, 0≦v<1, u≦v) is formed in contact with said p-type clad layer,
- a p-side electrode is formed in contact with said p-type contact layer, and
- a quantity of energy discontinuity at valence band in a junction between said p-type clad layer and said p-type contact layer is not higher than 0.1 eV.
Dependencies are inferred from the claim text.