Method for high-density plasma etching
AssigneeUnited Microelectronics Corp.
InventorsChan-Lon Yang, Michael W C Huang, Tong-Yu Chen
Life of this patent
Estimating the term…
Abstract
A method for high-density plasma etching. A substrate is provided. A material layer is formed on the substrate. A patterned photo-resist layer is formed on the oxide layer. The material layer is patterned by the high-density plasma etching, simultaneously, a formation of a barrier layer over the substrate with the patterning process is suppressed and nitrogen gas generated in the patterned photo-resist layer is reduced.
Claims15
A method for reducing the amount of nitrogen generated during a high-density plasma etching performed on an underlayer of a photo-resist layer added with amine compounds simultaneously with reducing a thickness of a barrier layer formed on the photo-resist layer with a process of the high-density plasma etching, the method comprising the steps of:
- adjusting etching parameters comprising:
- an operation pressure of about 3 mTorr to 100 mTorr;
- a CO flow rate of about 10 sccm to 50 sccm;
- a flow rate of C4F8 of about 10 sccm to 20 sccm;
- a total source power of about 500 W to 2000 W;
- and
- a process temperature during high-density plasma etching of about −15° C. to 10° C.
A method for high-density plasma etching, comprising the steps of:
- providing a substrate;
- forming a material layer on the substrate;
- forming a patterned photo-resist layer on the oxide layer;
- and
- patterning the material layer by the high-density plasma etching simultaneously with suppressing a formation of a barrier layer over the substrate and reducing nitrogen gas generated in the patterned photo-resist layer.
Dependencies are inferred from the claim text.