Compound semiconductor solar cell and production method thereof

A production method of a compound semiconductor solar cell including the steps of:

• laminating a gallium layer or a gallium-copper alloy layer, an indium layer and a copper layer on an electrode film formed on one of the surfaces of a substrate to form a metallic film, and subjecting said metallic film to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of Cu(In, Ga)S2 or Cu(In, Ga)Se2;
• and
• subjecting said p-type semiconductor layer to KCN treatment for removing copper sulfide or copper selenide by a KCN solution, and then forming an n-type semiconductor layer on said p-type semiconductor layer;
• said production method characterized in that said indium layer is formed under heating, or the formed indium layer is heat-treated by a heat-treatment while the surface of said indium layer is exposed.

A production method of a compound semiconductor solar cell including the steps of:

• laminating an indium layer and a copper layer on an electrode film formed on one of the surfaces of a substrate to form a metallic film and subjecting said metallic film to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of CuInS2 or CuInSe2;
• and
• subjecting said p-type semiconductor layer to KCN treatment for removing copper sulfide or copper selenide by a KCN solution, and then forming an n-type semiconductor layer on said p-type semiconductor layer;
• said production method characterized in that a thin film metal layer comprising gold (Au), platinum (Pt), or palladium (Pd), which has a thickness smaller than the thickness of said p-type semiconductor layer, is formed on the surface of said electrode film, and then a metallic film comprising an indium layer and a copper layer is formed on the surface of said thin film metal layer.

A production method of a compound semiconductor solar cell including the steps of:

• laminating a gallium layer or a gallium-copper alloy layer, an indium layer and a copper layer on an electrode film formed on one of the surfaces of a substrate to form a metallic film and subjecting said metallic film to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of Cu(In, Ga)S2 or Cu(In, Ga)Se2;
• and
• subjecting said p-type semiconductor layer to KCN treatment for removing copper sulfide or copper selenide by a KCN solution, and then forming an n-type semiconductor layer on said p-type semiconductor layer;
• said production method characterized in that a thin film metal layer comprising gold (Au), platinum (Pt), or palladium (Pd), which has a thickness smaller than the thickness of said p-type semiconductor layer, is formed on the surface of said electrode film, and then a metallic film comprising a gallium layer or a gallium-copper alloy layer, an indium layer and a copper layer is formed on the surface of said thin film metal layer.

A production method for a compound semiconductor solar cell including the steps of:

• laminating an indium layer and a copper layer on an electrode film formed on one of the surfaces of a substrate to form a metallic film, and subjecting said metallic film to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of CuInS2 or CuInSe2;
• and
• subjecting said p-type semiconductor layer to KCN treatment to remove copper sulfide or copper selenide by a KCN solution, and then forming an n-type semiconductor layer on said p-type semiconductor layer;
• said production method characterized in that the formed indium layer is heat-treated by a heat-treatment, the heating temperature of which is such that said substrate is heated to 120 to 220° C., while the surface of said indium layer is exposed, and said copper layer is formed on the surface of said indium layer after said heat-treatment.