Amorphous silicon solar cell
AssigneeMitsubishi Heavy Industries, Ltd.
InventorsYoshiaki Takeuchi, Masayoshi Murata, Akemi Takano, Tatsuyuki Nishimiya, Syouji Morita, Tatsufumi Aoi, Tatsuji Horioka
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Abstract
An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.
Claims2
An amorphous silicon solar cell comprising a transparent substrate, a transparent electrode formed on said transparent substrate, a power-generating film formed on said transparent electrode and a back-side electrode formed on said power-generating film,
- characterized in that said power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers, and a defect density in said i-type hydrogenated amorphous silicon layer is less than 1×1015 defects/cc and wherein a thickness of said i-type hydrogenated amorphous silicon layer is not more than 300 nm.
An amorphous silicon solare cell comprising a substrate, a transparent electrode formed on said substrate, a power-generating film formed on said transparent electrode, and a back-side electrode formed on said power-generating film,
- characterized in that said power-generating film is formed by sequentially stacking n-type/i-type/p-type hydrogenated amorphous silicon layers, and a defect density in said i-type hydrogenated amorphous silicon layer is less than 1×1015 defects/cc and wherein a thickness of said i-type hydrogenated amorphous silicon layer is not more than 300 nm.
Dependencies are inferred from the claim text.