Boric acid containing compositions for stripping residues from semiconductor substrates
AssigneeAdvanced Technology Materials, Inc.
InventorsWilliam A. Wojtczak, George Guan, Long Nguyen
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Abstract
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional) 0-5% Chelating agent (optional) 0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA)
Claims7
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- Boric acid 17% Monoethanolamine 45% Water 32% Catechol 6%
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- Boric acid 15% Monoethanolamine 43% Water 34.8% Lactic acid 6.2%
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage be weight ranges shown:
- Boric acid 10% Triethanolamine 38% Water 35% Acetoacetamide 17%
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- Boric acid 15% Monoethanolamine 35% Water 35% Salicylaldehyde 15%
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- Boric acid 12% Monoethanolamine 45% Triethanolamine 10% Water 33%
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- Boric acid 17% Monoethanolamine 40% Water 38% Ethylene glycol 5%
Dependencies are inferred from the claim text.