Method for the formation of thin films for use as a semiconductor device
AssigneeSony Corporation
InventorJunichi Sato
Life of this patent
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Abstract
A film formation method which comprises the steps of forming a high melting metal film on a substrate to cover an insulating pattern formed on the substrate therewith, and forming on the surface of the high melting metal film a high melting metal nitride film or a high melting oxide nitride film. The high melting metal film in the first step is formed by a chemical vapor deposition process, after which the high melting metal nitride or high melting metal oxide nitride film is continuously formed by the chemical vapor deposition process. During the CVD processes in the first and second steps, the substrate may be applied with an RF bias.
Claims19
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate having a patterned insulating layer formed on a surface thereof, the insulating layer being patterned to form at least one contact hole defining side walls of said insulating layer and an exposed portion of the surface of said semiconductor substrate;
- forming a first film by a first chemical vapor deposition to cover the patterned insulating layer, the side walls and the exposed portion, the first film being a pure metal selected from a group consisting of titanium, tungsten, molybdenum, hafnium, and zirconium;
- without exposing the first film to air, successively forming a second film by a second chemical vapor deposition on the first film, said second film being a metal oxynitride and the metal of the compound being the metal used to form the first film;
- and then forming a tungsten film on the second film to fill each contact hole with the tungsten film, said first and second chemical vapor depositions being performed using a gas consisting of a halogen and said metal.
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor substrate having a patterned insulating layer on a surface thereof, said insulating layer having at least one contact hole with side walls to expose a selected portion of the surface of the semiconductor substrate;
- depositing a first film by a first chemical vapor deposition to cover the insulating layer, the side walls of the contact hole and the exposed selected portion of the surface of the semiconductor substrate, said first film being a metal film with the metal selected from a group consisting of titanium, tungsten, molybdenum, hafnium, and zirconium;
- without exposing the first film to air, successively subjecting the first film to a second chemical vapor deposition to form a second film on the first film, said second film being selected from a group consisting of a metal nitride film and a metal oxynitride film and the second film using the metal used to form the first film;
- and forming a tungsten film on the second film to fill each contact hole with the tungsten film, said first and second chemical vapor depositions being performed using a gas consisting of a halogen and said metal.
A method of manufacturing a semiconductor device comprising the steps of providing a chemical vaporization device having a first chamber connected by a gate valve to a second chamber;
- providing a semiconductor substrate having a patterned insulating layer on a surface thereof, said insulating layer having at least one contact hole with side walls to expose a selected portion of the surface of the semiconductor substrate;
- inserting the substrate in the first chamber and depositing a first film by a first chemical vapor deposition to cover the insulating layer, the side walls of the contact hole and the exposed selected portion of the surface of the semiconductor substrate, said first film being a metal film with the metal selected from a group consisting of titanium, tungsten, molybdenum, hafnium, and zirconium;
- transferring the substrate through the gate valve to the second chamber without exposing the first film to air;
- while in the second chamber, successively subjecting the first film to a second chemical vapor deposition to form a second film on the first film, said second film being selected from a group consisting of a metal nitride film and a metal oxynitride film and the second film using the metal used to form the first film;
- and forming a tungsten film on the second film to fill each contact hole with the tungsten film, said first and second chemical vapor depositions being performed using a gas consisting of a halogen and said metal.
Dependencies are inferred from the claim text.