Semiconductor device having multi-layered metalization and method of manufacturing the same

Method for manufacturing a semiconductor device having multi-layer metalization, comprising:

• (a) forming a first conductive layer in a vacuum chamber, including, in succession and without intervening interruption, so as to prevent formation of a layer having a high resistance
• forming a first aluminum alloy layer,
• forming a metal layer on the first aluminum alloy layer, the metal layer including a metal selected from the group consisting of Ti, Zr, Hf, V and Nb, and
• forming a metal nitride layer on the metal layer, the metal nitride layer including a nitride selected from the group consisting of TiN, ZrN, HfN, VN and NbN, with the aluminum alloy layer and the metal nitride layer being conductively coupled together;
• (c) forming an insulating layer on the first conductive layer;
• (d) forming a via in the insulating layer, so that a surface of the first aluminum alloy layer is exposed through the via;
• and
• (e) forming a second conductive layer on the insulating layer and the exposed surface of the first aluminum alloy layer, so that the second conductive layer is in contact with the first aluminum alloy layer at the via, whereby the metalization continues to conduct even if the first aluminum alloy layer becomes non-conducting.

Method for manufacturing a semiconductor device having multi-layer metalization, comprising:

• (a) forming an insulating layer on a surface of a substrate;
• (b) forming an aluminum alloy layer on the insulating layer;
• (c) forming a metal layer on the aluminum alloy layer, the metal layer including a metal selected from the group consisting of Ti, Zr, Hf, V and Nb;
• and
• (d) forming a metal nitride layer on the metal layer, the metal nitride layer comprising a nitride selected from the group consisting of TiN, ZrN, HfN, VN and NbN;
• wherein said forming an aluminum alloy layer, said forming a metal layer and said forming a metal nitride layer are performed successively and without interruption in a vacuum chamber to prevent a formation of a layer having a high resistance, so that the aluminum alloy layer is conductively coupled to the metal nitride layer, whereby the metalization continues to conduct even if the aluminum alloy layer becomes non-conducting.

Method for manufacturing a semiconductor device having multi-layer metalization, comprising:

• (a) forming an insulating layer on a surface of a substrate;
• (b) forming an aluminum alloy layer on the insulating layer;
• (c) applying, directly onto an upper surface of the aluminum alloy layer in a vacuum chamber, a layer of material consisting of metal selected from the group consisting of Ti, Zr, Hf, V and Nb;
• and
• (d) in the vacuum chamber, immediately following said applying a layer of material, applying, directly onto an upper surface of the metal layer, a layer of metal nitride, the metal nitride being a nitride of the selected metal, said applying a layer of material and said applying a layer of metal nitride preventing a formation of a layer having a high resistance, so that the aluminum alloy layer is conductively coupled to the metal nitride layer, whereby the metalization continues to conduct even if the aluminum alloy layer becomes non-conducting.

Method for manufacturing a semiconductor device having multi-layer metalization, comprising:

• (a) forming a first conductive layer in a vacuum chamber, including in succession and without interruption so as to prevent a formation of a layer having a high resistance
• forming a first aluminum alloy layer,
• applying a first layer of metal directly onto an upper surface of the first aluminum alloy layer, the metal being selected from the group consisting of Ti, Zr, Hf, V and Nb, and
• applying a first layer of metal nitride directly onto an upper surface of the first metal layer, the metal nitride being selected from the group consisting of TiN, ZrN, HfN, VN and NbN, the aluminum alloy layer and the metal nitride layer being conductively coupled together;
• (c) forming an insulating layer on an upper surface of the first conductive layer;
• (d) forming a via in the insulating layer, so that the upper surface of the first aluminum layer is exposed through the via;
• and
• (e) forming a second conductive layer on the insulating layer and the exposed surface of the first aluminum alloy layer, so that the second conductive layer is in contact with the first aluminum alloy layer at the via, whereby the metalization continues to conduct even if the aluminum alloy layer becomes non-conducting.

Method for manufacturing a semiconductor device having multi-layer metalization, comprising:

• (a) forming an insulating layer on a surface of a substrate;
• (b) forming an aluminum alloy layer on the insulating layer;
• (c) applying a layer of metal directly onto an upper surface the alloy layer, the metal layer including a metal selected from the group consisting of Ti, Zr, Hf, V and Nb;
• and
• (d) immediately following said applying a layer, forming a layer of metal nitride on an upper surface of the metal layer, the metal nitride layer comprising a nitride selected from the group consisting of TiN, ZrN, HfN, VN and NbN;
• wherein said forming an aluminum layer, said applying a layer of metal, and said forming a layer of metal nitride are performed successively in a vacuum chamber to prevent a formation of a layer having a high resistance, so that the aluminum alloy layer is conductively coupled to the metal nitride layer, whereby the metalization continues to conduct even if the aluminum alloy layer becomes non-conducting.