US 6,306,761 B1 · Method of manufacturing semiconductor device

Abstract

A hard Al oxide film having a high melting point, which grows on the surface of an Al—Cu film during a wafer is carried in atmospheric air, obstructs the burying of a viahole with the Al—Cu film by high pressure reflow, with a result that a void remains in the hole. The present invention is intended to remove such an Al oxide film grown on the Al—Cu film formed by sputtering, by Ar+ sputtering/etching directly before high pressure reflow. Moreover, when a Ti oxide film is present on the surface of a Ti based underlying film formed by CVD, an Al oxide film is possibly grown at the boundary between the Ti based underlying film and an Al—Cu film laminated thereon. In this case, the Ti oxide film is similarly removed directly before formation of the Al—Cu film, thereby preventing the growth of the Al oxide film. With this method, it is possible to highly keep thermal flow of a conductive film in a high pressure reflow process, and hence to desirably bury a connection hole with the conductive film.

Claims23

Dependent claims

A method of manufacturing a semiconductor device, comprising:

a first step of forming a conductive film over an underlying film in such a manner as to block the opening end of a recessed portion formed in an insulating film on a substrate, said first step being performed following the removal of an oxide film grown on a surface of said underlying film;
a second step of removing an oxide film grown on the surface of said conductive film;
and
a third step of burying said recessed portion with said conductive film by high pressure reflow, thereby forming an interconnection.

1 more element

Dependencies are inferred from the claim text.

Method of manufacturing semiconductor device

Life of this patent

Method of manufacturing semiconductor device

Life of this patent

Abstract

Claims23