Feasible, gas-dielectric interconnect process

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a semiconductor element in a surface region of a semiconductor substrate;
• forming a first insulating layer on the semiconductor substrate, covering the semiconductor element;
• forming contact holes in the first insulating layer, said contact holes reaching the semiconductor element;
• forming conductors of a first type in the contact holes of the first insulating layer;
• forming a first solid layer on the first insulating layer and the conductors of the first set;
• forming slits of a first set in the first solid layer;
• forming conductors in the slits of the first set, thereby forming wires of a first set;
• forming a second insulating layer on the first solid layer and the wires of the first set;
• and
• oxidizing the first solid layer, thereby changing the same into gas layers, wherein said first and second solid layers are carbon layers and the carbon layers are ashed, thereby providing complete cavities among said wires of the first set and among said wires of the second set, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a first solid layer on said first insulating layer;
• forming slits of a first set in said first solid layer;
• forming conductors of a first set in said slits of the first set, thereby forming wires of a first set;
• forming a second insulating layer on the first solid layer and said wires of the first set;
• oxidizing said first solid layer, changing the same into gas layers of a first set;
• forming a second solid layer on said second insulating layer;
• forming contact holes of a first set in said second solid layer and said second insulating layer, said contact holes of the first set reaching said wires of the first set;
• forming columnar conductors in said contact holes of the first set;
• forming a third insulating layer on said second solid layer and said columnar conductors;
• forming a third solid layer on said third insulating layer;
• forming slits of a second set in said third insulating layer;
• forming contact holes of a second set in said third insulating layer, said contact holes of the second set reaching said columnar conductors;
• forming conductors in said slits of the second set, thereby forming wires of a second set;
• forming a fourth insulating layer on said third solid layer and said wires of the second set;
• and
• oxidizing said second and third solid layers, changing the same into gas layers of a second set and gas layers of a third set, wherein said first, second and third solid layers are carbon layers, said carbon layers are ashed, thereby providing complete cavities among said wires of the first set, among said wires of the second set and among said columnar conductors, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a first solid layer on said first insulating layer;
• forming slits of a first set in said first insulating layer;
• forming conductors of a first set in said slits of the first set, thereby forming wires of a first set;
• forming a second insulating layer on said first solid layer and said wires of the first set;
• oxidizing said first solid layer, changing the same into gas layers;
• forming a second solid layer on said second insulating layer;
• forming a third insulating layer on said second solid layer;
• forming a third solid layer on said third insulating layer;
• forming slits of a second set in said third solid layer;
• forming contact holes in said third insulating layer, said second solid layer and said second insulating layer, said contact holes reaching said wires of the first set;
• forming conductors of a second set in said slits of the second set and said contact holes of the second set, thereby forming wires of a second set;
• forming a fourth insulating layer on said third solid layer and said wires of the second set;
• oxidizing said second and third solid layers, changing the same into gas layers of a first set and gas layers of a second set, wherein said first, second and third solid layers are carbon layers, the carbon layers are ashed, thereby providing complete cavities among said wires of the first set, among said wires of the second set and among said columnar conductors, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• forming a solid layer on said insulating layer;
• forming a plurality of slits in said solid layer;
• forming conductors in said slits, thereby forming a plurality of wires;
• forming a silicon layer on said solid layer and said wires;
• oxidizing said solid layer, changing the same to gas layers and said silicon layer into a silicon oxide layer, thereby forming coupling layers which firmly couple said wires with said silicon layer, wherein said solid layer is a carbon layer, and the carbon layer is ashed, thereby providing complete cavities among said wires, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an insulating layer on a semiconductor substrate;
• forming a solid layer on said insulating layer;
• forming a plurality of slits in said solid layer;
• forming conductors in said slits, thereby forming a plurality of wires;
• forming a metal layer on said solid layer and said wires;
• oxidizing said solid layer, changing the same to gas layers, and said metal layer to a metal oxide layer, thereby forming coupling layers which firmly couple said wires with said metal layer, wherein said solid layer is a carbon layer, and the carbon layer is ashed, thereby providing complete cavities among said wires, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a solid layer on said first insulating layer;
• forming a plurality of slits in said solid layer;
• forming a metal layer on said solid layer and the inner surfaces of said slits;
• forming conductors in said slits, thereby forming a plurality of wires;
• oxidizing said solid layer, thereby changing the same into gas layers;
• oxidizing or nitriding those parts of said metal layer which are provided above said cavities and sides of said wires, thereby forming second insulating layers;
• and
• forming a third insulating layer on said wires and said second insulating layers, wherein said solid layer is a carbon layer, and the carbon layer is ashed, thereby providing complete cavities among said wires, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a solid layer on said first insulating layer;
• forming a plurality of slits in said solid layer;
• forming a metal layer on said solid layer and the inner surfaces of said slits;
• forming conductors in said slits, thereby forming a plurality of wires;
• oxidizing said solid layer, thereby changing the same into gas layers, and simultaneously oxidizing those parts of said metal layer which are provided above said cavities and sides of said wires, thereby forming metal oxide layers;
• and
• forming a second insulating layer on said wires and said metal oxide layers, wherein said solid layer is a carbon layer, and the carbon layer is ashed, thereby providing complete cavities among said wires, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a solid layer on said first insulating layer;
• forming a plurality of slits in said solid layer;
• forming a first wire-protecting metal layer on the inner surfaces of the slits and on the solid layer, said first wire-protecting metal layer prohibiting passage of oxygen;
• forming conductors on said wire-protecting metal layer;
• polishing or etching said wire-protecting metal layer and said conductors, leaving wire-protecting metal layers and conductors in said slits, thereby forming wires;
• forming wire-protecting layers on said wires, respectively, said wire-protecting layers prohibiting passage of oxygen;
• forming a second insulating layer on said solid layer an said wire-protecting layers;
• and
• oxidizing said solid layer, changing the same into gas layers, wherein said solid layer is a carbon layer, and the carbon layer is ashed, thereby providing complete cavities among said wires, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating layer on a semiconductor substrate;
• forming a conductive layer on said first insulating layer;
• forming a first solid layer on said conductive layer;
• etching said first solid layer and said conductive layer, thereby forming a plurality of wires;
• forming a second solid layers on sides of said wires;
• forming a second insulating layer on said first and second solid layers;
• oxidizing said first and second solid layers, changing the same into gas layers, whereby said wires are placed in the gas layers, wherein said first and second solid layers are carbon layers, the carbon layers are ashed, thereby providing complete cavities among said wires of the first set and among said wires of the second set, which are filled with a mixture gas comprising at least oxygen and carbon dioxide.