Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
AssigneeThe Regents of the University of California
InventorsA. Paul Alivisatos, Xiaogang Peng, Liberato Manna
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Abstract
A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.
Claims30
A process for the formation of Group III-V semiconductor nanocrystals comprises introducing the precursors into a heated binary mixture of first and second different surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of said semiconductor nanocrystals formed in said binary mixture of surfactants is capable of being controlled by adjusting the ratio of said first and second surfactants in said binary mixture.
A process for forming shaped Group III-V semiconductor nanocrystals in a heated binary mixture of surfactants which comprises:
- a) forming one or more solutions, each comprising one or more Group III and/or Group V semiconductor nanocrystal precursors dissolved in a liquid which is a solvent for said one or more semiconductor precursors;
- b) forming a binary mixture of high boiling organic surfactants comprising:
- i) a first surfactant;
- and
- ii) a second surfactant;
- c) adjusting the ratio of said first and second surfactants in said binary mixture to control the shape of said semiconductor nanocrystals to be formed therein;
- d) heating said binary mixture of surfactants to a temperature at which said Group III and Group V precursors will react in said heated binary mixture of surfactants to form said Group III-V semiconductor nanocrystals;
- e) adding said one or more solutions of Group III and Group V semiconductor nanocrystal precursors to said heated binary mixture of surfactants to form said semiconductor nanocrystals;
- and
- f) subsequently reducing the temperature of said heated binary mixture of surfactants containing said semiconductor nanocrystals to stop said growth of said semiconductor nanocrystals.
A process for forming shaped Group III-V semiconductor nanocrystals in a heated binary mixture of surfactants which comprises:
- a) forming a solution comprising:
- i) a first semiconductor precursor comprising one or more particular Group III metals, or compounds containing one or more particular Group III metals;
- ii) a second semiconductor precursor comprising one or more particular Group V elements, or compounds containing one or more particular Group V elements;
- and
- iii) a liquid which is a solvent for said first and second precursors;
- b) forming a binary mixture of high boiling phosphorus-containing organic surfactants comprising:
- i) a first surfactant capable of promoting the growth of spherical semiconductor nanocrystals when a sufficient amount of said surfactant is present in said binary mixture of surfactants;
- and
- ii) a second surfactant comprises a phosphorus-containing organic acid surfactant capable of promoting the growth of rod-like semiconductor nanocrystals when a sufficient amount of said surfactant is present in said binary mixture of surfactants;
- c) adjusting the ratio of said first and second surfactants in said binary mixture to control the shape of said semiconductor nanocrystals to be formed therein;
- d) heating said binary mixture of phosphorus-containing organic surfactants to a temperature sufficient to permit formation of Group III-V semiconductor nanocrystals therein;
- e) adding said solution of Group III and Group V semiconductor nanocrystal precursors to said heated binary mixture of surfactants to form said semiconductor nanocrystals;
- and
- f) subsequently reducing the temperature of said heated binary mixture of surfactants containing said semiconductor nanocrystals to stop said growth of said semiconductor nanocrystals.
A Group III-V semiconductor nanocrystal having a rod-like shape formed by reacting together a precursor containing one or more Group III metals selected from the group consisting of Al, Ga, and In with a precursor containing one or more Group V elements selected from the group consisting of P, As, and Sb in a binary mixture of surfactants including a phosphorus-containing organic acid surfactant capable of promoting growth of rod-like semiconductor nanocrystals when a sufficient amount of said surfactant is present in said binary mixture of surfactants.
Dependencies are inferred from the claim text.