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US 6,306,697 B1Granted
Low temperature polysilicon manufacturing process
AssigneeUnited Microelectronics Corp.
InventorsTing-Chang Chang, Du-Zen Peng, Chun-Yen Chang
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Abstract
A low temperature polysilicon manufacturing method. A system for performing physical vapor deposition is used to form an amorphous silicon film with micro-crystals therein. The amorphous silicon film is annealed at a temperature between 400° C. to 500° C. for about 6 to 16 hours to form a polysilicon film. The polysilicon film can be further processed into a low-temperature polysilicon film transistor.
Claims16
A low-temperature polysilicon manufacturing process, comprising the steps of:
- providing a substrate;
- forming an amorphous silicon layer having a plurality of micro-crystals therein over the substrate;
- and
- performing an annealing treatment to transform the amorphous silicon layer into a polysilicon layer with large crystals therein.
1 more element
A method for forming a low-temperature polysilicon film transistor, comprising the steps of:
- providing a substrate;
- forming an amorphous silicon layer having a plurality of micro-crystals therein over the substrate;
- performing a low temperature annealing treatment to transform the amorphous silicon layer into a low-temperature polysilicon layer having big crystals therein;
- sequentially forming a gate dielectric layer and a gate electrode over the low-temperature polysilicon layer;
- and
- conducting an ion implantation to form a source/drain region in the low-temperature polysilicon layer on each side of the gate electrode.
3 more elements
Dependencies are inferred from the claim text.