Coplanar type polysilicon thin film transistor and method of manufacturing the same
AssigneeLG. Philips LCD Co., Ltd.
InventorsSeong Moh Seo, Sung Ki Kim
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Abstract
The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate sequentially; patterning the insulating layer and the gate metal layer to form a gate insulating layer and a gate electrode; treating an impurity and a catalyst metal on the amorphous silicon layer using the gate electrode as a mask; and applying a DC voltage to both terminals of the amorphous silicon layer to form a polysilicon layer, the polysilicon layer having source and drain regions and an active area.
Claims11
A method of manufacturing a thin film transistor, comprising:
- depositing sequentially on a substrate an amorphous silicon layer, a first insulating layer, and a metal layer;
- patterning the first insulating layer and the metal layer to form a gate insulating layer and a gate electrode;
- treating the amorphous silicon layer with an impurity and a catalyst metal using the gate electrode as a mask;
- and
- applying a direct current voltage to both ends of the amorphous silicon layer to form a polysilicon layer, the polysilicon layer having source and drain regions and an active area.
Dependencies are inferred from the claim text.