Group III-V complex vertical cavity surface emitting laser diode and method for manufacturing the same

A method of manufacturing a group III-V complex vertical cavity surface emitting laser diode, comprising the steps of:

• (a) sequentially growing a preliminary lower DBR layer which includes pairs of a lower refractive index material layer and a higher refractive index material layer having a refractive index higher than the lower refractive index material layer, a preliminary cavity layer and a preliminary upper DBR layer which includes pairs of a lower refractive index material layer and a higher refractive index material layer having a refractive index higher than the lower refractive index material layer, on a semiconductor substrate, wherein the preliminary lower and upper DBR layers are each formed of pairs of an AlxGa1−xN layer and an AlyGa1−yN layer when 0≦×<y≦1;
• (b) forming an upper DBR layer by removing the lower refractive index material layers from the preliminary upper DBR layer using a selective etch method and forming air layers having a relatively low refractive index, wherein the lower refractive index material layers are AlyGa1−yN layers;
• (c) forming a cavity by etching the preliminary cavity layer using a second etch method;
• and
• (d) forming a lower DBR layer by forming low refractive index layers of air by etching the lower refractive index material layers of the preliminary lower DBR layer from the side surface of the preliminary lower DBR layer using the selective etch method, wherein the lower refractive index material layers are AlyGa1−yN layers.