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AssigneeCanon Kabushiki Kaisha
InventorsHideo Tamura, Yasushi Fujioka, Masahiro Kanai, Akira Sakai
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The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+½)T wherein n is z−{fraction (1/16)}<n<z+{fraction (1/16)} and z is an integer equal to or greater than 0. The present method can solve the problem of the prior art that when a sputtering apparatus is applied to a roll-to-roll system magnetron sputtering apparatus, any part of a belt-like substrate is subjected to sputtering for a different sputtering time, thereby deteriorating the distribution of film thickness in the direction of conveying the belt-like substrate.
A method of producing a photovoltaic device, comprising the steps of forming a metal layer and/or a transparent and electroconductive layer by using a sputtering method comprising the steps of:
A method of producing a photovoltaic device, comprising the steps of:
A method of producing a photovoltaic device, comprising the steps of:
Dependencies are inferred from the claim text.