Apparatus for reducing polymer deposition on substrate support
AssigneeLam Research Corporation
InventorsWilliam S. Kennedy, Thomas E. Wicker, Robert A. Maraschin, Joel M. Cook, Alan M. Schoepp
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AssigneeLam Research Corporation
InventorsWilliam S. Kennedy, Thomas E. Wicker, Robert A. Maraschin, Joel M. Cook, Alan M. Schoepp
Estimating the term…
In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.
A plasma processing apparatus and a substrate mounted therein comprising:
A substrate support for a plasma processing apparatus having a processing chamber and a power source which energizes process gas in an interior of the processing chamber into a plasma state for processing a substrate, the substrate support comprising:
A method of controlling polymer deposition within a plasma processing chamber comprising:
Dependencies are inferred from the claim text.