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US 6,305,390 B1Granted
Method for cleaning inside of chamber using RF plasma
AssigneeSamsung Electronics Co., Ltd.
InventorJin-ho Jeon
Life of this patent
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Abstract
A method for cleaning the inside of a chamber using a radio frequency (RF) plasma, in which all parts within the camber can be completely cleaned. In the cleaning method, the conditions inside the chamber are stabilized. Then, impurities are cleaned from the inside of the chamber using the RF plasma, while varying the pressure in the chamber continuously or in discrete steps.
Claims6
A method for cleaning an inside of a chamber using a radio frequency (RF) plasma, comprising:
- (a) stabilizing the inside of the chamber, an inner surface of which has material layers to be removed through cleaning;
- (b1) cleaning outer edges of the chamber at a pressure ranging from 600 m Torr to 800 m Torr using the RF plasma:
- (b2) cleaning a center portion of the chamber at a pressure ranging from 300 m Torr to 600 m Torr using the RF plasma;
- and
- (b3) cleaning a portion of the chamber that was not cleaned during said cleaning in (b1) and (b2), at a pressure ranging from 100 m Torr to 300 m Torr using the RF plasma,
- wherein an inert gas is introduced into the chamber during said cleaning in (b1) through (b3), through a backside of a suscepter installed in a lower portion of the chamber, to clean the suscepter.
3 more elements
Dependencies are inferred from the claim text.