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US 6,305,316 B1Granted
Integrated power oscillator RF source of plasma immersion ion implantation system
AssigneeAxcelis Technologies, Inc.
InventorsWilliam F. DiVergilio, Peter L. Kellerman, Kevin T. Ryan
Life of this patent
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Abstract
A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.
Claims19
An RF plasma generator system, comprising:
- an oscillator resonant circuit including an antenna for igniting and maintaining a plasma,
- wherein the plasma and antenna are part of the oscillator resonant circuit and form an oscillator resonant circuit load, and
- wherein an oscillator operating current, voltage and frequency automatically adapt to plasma conditions.
A processing system, comprising:
- a wafer handling system for introducing semiconductor wafers into a processing chamber;
- and
- an oscillator resonant circuit including an antenna for igniting and maintaining a plasma within the processing chamber,
- wherein the plasma and antenna are part of the oscillator resonant circuit, and wherein an oscillator operating current, voltage and frequency automatically adapt to plasma conditions.
1 more element
An RF plasma generator system, comprising:
- a plasma chamber;
- an oscillator having first and second terminals;
- and
- an oscillator resonant circuit comprising:
- an antenna located in the plasma chamber and serially connected with a plasma in the resonant circuit for igniting and maintaining the plasma;
- and
- a capacitance connected across the plasma and the antenna;
- wherein the first and second terminals of the oscillator are connected across the capacitance, wherein the plasma and antenna form an oscillator resonant circuit load, and wherein an operating current, voltage and frequency associated with the oscillator automatically adapt to plasma conditions.
5 more elements
Dependencies are inferred from the claim text.