Lattice matched solar cell and method for manufacturing the same
AssigneeJapan Energy Corporation
InventorsTatsuya Takamoto, Hiroshi Kurita, Takaaki Agui, Eiji Ikeda
Life of this patent
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Abstract
A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first InxGa1-xAs layer of first conductivity type formed on the buffer layers, and a second InxGa1-xAs layer of second conductivity type formed on the first InxGa1-xAs layer to form pn junction. Because the composition x of In contained in the first InxGa1-xAs layer and the second InxGa1-xAs layer is in a range of 0.005≦x≦0.015, the inexpensive and high conversion efficiency solar cell can be achieved.
Claims26
A solar cell comprising:
- a germanium substrate;
- a buffer layer formed on the germanium substrate;
- a first InxGa1-xAs layer of first conductivity type formed on the buffer layer, wherein a composition of Indium particular to the first InxGa1-xAs layer lies in a range between 0.005 and 0.015;
- and
- a second InxGa1-xAs layer of a second conductivity type formed on the first InxGa1-xAs layer to form a first pn junction with the first InxGa1-xAs layer, and the second InxGa1-xAs layer has a composition of Indium particular to the second InxGa1-xAs layer.
A method for manufacturing a solar cell, comprising the steps of:
- epitaxially growing buffer layer on a germanium substrate;
- epitaxially growing a first InxGa1-xAs layer of a first conductivity type on the buffer layer, wherein a composition of Indium particular to the first InxGa1-xAs layer lies in a range between 0.005 and 0.015;
- and
- epitaxially growing a second InxGa1-xAs layer of a second conductivity type on the first InxGa1-xAs layer, and the second InxGa1-xAs layer has a composition of Indium particular to the second InxGa1-xAs layer.
A solar cell comprising:
- a germanium substrate;
- a buffer layer formed epitaxially on the germanium substrate;
- a InxGa1-xAs layer of a first conductivity type formed epitaxially on the buffer layer, wherein a composition of Indium peculiar to the InxGa1-xAs layer lies in a range between 0.005 and 0.015;
- and
- a semiconductor layer of a second conductivity type formed on the InxGa1-xAs layer to form a first pn junction with the InxGa1-xAs layer.
Dependencies are inferred from the claim text.