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US 6,298,079 B1Granted
Gallium nitride type laser for emitting blue light
AssigneeRohm Co., Ltd.
InventorsHaruo Tanaka, Yukio Shakuda
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Abstract
In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
Claims4
A semiconductor laser comprising:
- a substrate;
- a buffer layer made of GaN;
- a lower cladding layer made of a first conductive type AlzGa1−zN (0<z<1);
- an active layer made of InxGa1−xN (0<x<1);
- an absorption layer made of a second conductive type InrGa1−rN (0<r<1,r≦x);
- a second upper cladding layer made of a second conductive type AlzGa1−zN (0<z<1);
- a current blocking layer made of a first conductive type AlN having a stripe-like opening;
- a third upper cladding layer made of a second conductive type AlzGa1−zN (0<z<1);
- a second conductive type contact layer;
- an upper electrode being provided on said contact layer;
- and
- a lower electrode being connected to said lower cladding layer or to said buffer layer.
9 more elements
Dependencies are inferred from the claim text.